| Seminar on ESD (Electrostatic Discharge) |
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Dr. Steven H. Voldman, an IEEE Fellow, conducted a seminar on ESD (Electrostatic Discharge). The seminar was held last Saturday, 10 March 2007, at NW201. Industry practitioners in the Semiconductor sector, Faculty members, and students of the School of EE-ECE-COE attended the seminar.
In his presentation, Dr. Voldman emphasized that Electrostatic Discharge (ESD) phenomenon today is a reliability concern in semiconductor components and systems from cell phones, laptops, to automotive products. A key question today in the semiconductor industry is whether electrostatic discharge sensitivity will be a roadblock to the introduction, manufacturability or implementation of today’s technology, and of future nano-structures. He discussed the direction of Semiconductor technology will take as it into consideration ESD issues, and their implications which become increasingly important as the dimensions become smaller and as the frequencies go higher.
Dr. Steven H. Voldman holds a BS Engineering Science from the University of Buffalo, and MSEE degree from MIT, an MS Engineering Physics and PhD EE degrees from the University of Vermont under IBM Resident Study Fellow program. At MIT, he worked as a member of the MIT Plasma-Fusion centre, and the High Voltage Research Laboratory. He is currently with the ESD/Latchup Development, Semiconductor R&D, IBM Microelectronics. He has written three books on ESD. |
